IRF7751GTRPBF
MOSFET 2P-CH 30V 4.5A 8TSSOPManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® MOSFET array, part number IRF7751GTRPBF, features two P-channel MOSFETs in a single 8-TSSOP package. This device offers a Drain-Source Voltage (Vdss) of 30V and a continuous drain current capability of 4.5A at 25°C. The low on-resistance is specified at 35mOhm maximum at 4.5A and 10V gate-source voltage. With a logic level gate, this surface-mount component is suitable for applications requiring efficient power switching. Input capacitance (Ciss) is 1464pF maximum at 25V, and gate charge (Qg) is 44nC maximum at 10V. The component operates across a temperature range of -55°C to 150°C. This MOSFET array is commonly utilized in automotive and industrial applications, particularly in power management circuits. It is supplied in Tape & Reel packaging.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 1464pF @ 25V |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 4.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 44nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-TSSOP |
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