IRF7751
MOSFET 2P-CH 30V 4.5A 8TSSOPManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF7751 is a dual P-channel MOSFET array designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 4.5A at 25°C. The Rds On (Max) is rated at 35mOhm at 4.5A and 10V, indicating low conduction losses. With a Logic Level Gate feature, it facilitates direct control from lower voltage microcontrollers. The device is packaged in an 8-TSSOP surface-mount configuration and supports a maximum power dissipation of 1W. Key parameters include a Gate Charge (Qg) of 44nC at 10V and an Input Capacitance (Ciss) of 1464pF at 25V. The operating temperature range is -55°C to 150°C (TJ). This MOSFET array is suitable for use in industries such as automotive and industrial power management.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 1464pF @ 25V |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 4.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 44nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-TSSOP |
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