IRF7750TRPBF
MOSFET 2P-CH 20V 4.7A 8TSSOPManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF7750TRPBF is a 2 P-channel MOSFET array designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 4.7A at 25°C. With a low Rds On of 30mOhm at 4.7A and 4.5V, it minimizes conduction losses. The logic level gate feature and a gate charge (Qg) of 39nC at 5V facilitate efficient switching. The input capacitance (Ciss) is a maximum of 1700pF at 15V. This device is packaged in an 8-TSSOP (0.173", 4.40mm Width) for surface mounting, with a power dissipation of 1W. Operating temperature ranges from -55°C to 150°C. The IRF7750TRPBF is commonly utilized in automotive and industrial power management systems where space and efficiency are critical.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.7A |
| Input Capacitance (Ciss) (Max) @ Vds | 1700pF @ 15V |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 4.7A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 39nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | 8-TSSOP |
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