IRF7750TR
MOSFET 2P-CH 20V 4.7A 8TSSOPManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF7750TR is a dual P-channel MOSFET array designed for high-efficiency power management applications. This device features a 20V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 4.7A at 25°C. The low on-resistance of 30mOhm maximum at 4.7A and 4.5V gate-source voltage (Vgs) minimizes conduction losses. With a logic level gate, it offers compatibility with lower voltage control signals. The 8-TSSOP package, supplied on tape and reel, is suitable for surface mounting. Key parameters include a maximum power dissipation of 1W, gate charge (Qg) of 39nC at 5V, and input capacitance (Ciss) of 1700pF at 15V. This component is utilized in industries such as automotive and industrial power control.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.7A |
| Input Capacitance (Ciss) (Max) @ Vds | 1700pF @ 15V |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 4.7A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 39nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | 8-TSSOP |
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