IRF7750
MOSFET 2P-CH 20V 4.7A 8TSSOPManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF7750 is a 2 P-Channel MOSFET array designed for high-density power management applications. The device features a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 4.7A at 25°C. With a low on-resistance (Rds On) of 30mOhm at 4.7A and 4.5V Vgs, it offers efficient power switching. The logic-level gate facilitates direct control from low-voltage microcontrollers. Key parameters include a gate charge (Qg) of 39nC (max) at 5V and input capacitance (Ciss) of 1700pF (max) at 15V. This surface-mount device is housed in an 8-TSSOP package, offering a maximum power dissipation of 1W. Operating temperature range is -55°C to 150°C (TJ). The IRF7750 finds application in consumer electronics, industrial automation, and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.7A |
| Input Capacitance (Ciss) (Max) @ Vds | 1700pF @ 15V |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 4.7A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 39nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | 8-TSSOP |
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