IRF7555TRPBF
MOSFET 2P-CH 20V 4.3A MICRO8Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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The Infineon Technologies HEXFET® IRF7555TRPBF is a dual P-channel MOSFET array designed for efficient power management. This component features a 20V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 4.3A at 25°C. Its low on-resistance (Rds On) of 55mOhm at 4.3A and 4.5V Vgs, coupled with a logic-level gate, makes it suitable for applications requiring precise control. The device boasts a low gate charge (Qg) of 15nC at 5V and input capacitance (Ciss) of 1066pF at 10V. Packaged in an 8-TSSOP, 8-MSOP (Micro8™), this surface-mount component offers a maximum power dissipation of 1.25W and operates across a temperature range of -55°C to 150°C. This MOSFET array finds application in areas such as battery management and power switching within portable electronics and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.25W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 1066pF @ 10V |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 4.3A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | Micro8™ |
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