IRF7555TR
MOSFET 2P-CH 20V 4.3A MICRO8Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies MOSFET array, part number IRF7555TR, offers a dual P-channel configuration with a 20V drain-to-source voltage (Vdss) and 4.3A continuous drain current (Id) at 25°C. This device features a logic-level gate and a low on-resistance (Rds On) of a maximum 55mOhm at 4.3A and 4.5V Vgs. The IRF7555TR is housed in an 8-pin Micro8™ package, specifically an 8-TSSOP or 8-MSOP, suitable for surface mounting. With a maximum power dissipation of 1.25W, it is designed for applications requiring efficient switching and power management. Key electrical parameters include a gate charge (Qg) of 15nC at 5V and input capacitance (Ciss) of 1066pF at 10V. This component is commonly utilized in automotive, industrial, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.25W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 1066pF @ 10V |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 4.3A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | Micro8™ |
Request a Quote
Clients Also Buy
IRFI4019HG-117P
MOSFET 2N-CH 150V 8.7A TO220-5
AUIRF7379QTR
MOSFET N/P-CH 30V 5.8A 8SOIC
BSO330N02KGFUMA1
MOSFET 2N-CH 20V 5.4A 8DSO
