IRF7530TRPBF
MOSFET 2N-CH 20V 5.4A MICRO8Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® MOSFET Array, part number IRF7530TRPBF, is a dual N-channel device designed for high-efficiency switching applications. This component offers a continuous drain current of 5.4A at 25°C with a drain-source voltage (Vdss) of 20V. Featuring a low on-resistance of 30mOhm at 5.4A and 4.5V Vgs, it minimizes conduction losses. The device is housed in an 8-TSSOP/8-MSOP Micro8™ package suitable for surface mounting. Key electrical characteristics include a gate charge (Qg) of 26nC and input capacitance (Ciss) of 1310pF. Operating across a temperature range of -55°C to 150°C, this MOSFET array finds application in power management, battery charging, and portable electronics. The part is supplied in Tape & Reel packaging.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.3W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 5.4A |
| Input Capacitance (Ciss) (Max) @ Vds | 1310pF @ 15V |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 5.4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 26nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | Micro8™ |