IRF7530TR
MOSFET 2N-CH 20V 5.4A MICRO8Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® MOSFET array, part number IRF7530TR, features two N-channel enhancement mode devices in a single Micro8™ package. This surface-mount component offers a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of up to 5.4A at 25°C. With a low on-resistance (Rds On) of 30mOhm at 5.4A and 4.5V Vgs, it minimizes conduction losses. Key parameters include a gate charge (Qg) of 26nC (max) at 4.5V and input capacitance (Ciss) of 1310pF (max) at 15V. The IRF7530TR is designed for applications requiring efficient switching and low power dissipation, often found in battery management, power distribution, and consumer electronics. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.3W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 5.4A |
| Input Capacitance (Ciss) (Max) @ Vds | 1310pF @ 15V |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 5.4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 26nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | Micro8™ |
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