IRF7530PBF
MOSFET 2N-CH 20V 5.4A MICRO8Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF7530PBF is a dual N-channel MOSFET array designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 5.4A at 25°C. The Rds(On) is specified at a maximum of 30mOhm when conducting 5.4A with a 4.5V gate-source voltage. With a maximum power dissipation of 1.3W, this MOSFET array is suitable for power management and switching functions in industrial and automotive sectors. Key electrical parameters include a gate charge (Qg) of 26nC (max) at 4.5V and input capacitance (Ciss) of 1310pF (max) at 15V. The IRF7530PBF utilizes advanced MOSFET technology and is provided in a Micro8™ package (8-TSSOP, 8-MSOP) for surface mounting.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.3W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 5.4A |
| Input Capacitance (Ciss) (Max) @ Vds | 1310pF @ 15V |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 5.4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 26nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | Micro8™ |
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