IRF7509TRPBF
MOSFET N/P-CH 30V 2.7A/2A MICRO8Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF7509TRPBF is a dual N-channel and P-channel MOSFET array designed for power management applications. This component features a 30V drain-source voltage rating and offers continuous drain currents of 2.7A for the N-channel and 2A for the P-channel. The device is built with a logic level gate, enhancing its compatibility with lower voltage control signals. With a maximum power dissipation of 1.25W and a low on-resistance of 110mOhm at 1.7A and 10V, it is suitable for applications requiring efficient switching. The IRF7509TRPBF is packaged in a Micro8™ (8-TSSOP, 8-MSOP) for surface mounting and operates within a temperature range of -55°C to 150°C. Typical applications include battery management, power supplies, and portable electronics.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: ActivePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.25W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 2.7A, 2A |
| Input Capacitance (Ciss) (Max) @ Vds | 210pF @ 25V |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 1.7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | Micro8™ |