IRF7509TR
MOSFET N/P-CH 30V 2.7A/2A MICRO8Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF7509TR is a dual N-channel and P-channel MOSFET array designed for high-efficiency switching applications. This device features a drain-to-source voltage (Vdss) of 30V, with continuous drain current capabilities of 2.7A for the N-channel and 2A for the P-channel at 25°C. The MOSFETs utilize Logic Level Gate technology, enabling operation with lower gate drive voltages. Key electrical parameters include a maximum Rds(On) of 110mOhm at 1.4A and 10V for the N-channel, and a corresponding Rds(On) for the P-channel. The device offers low gate charge (Qg) of 12nC (max) at 10V and input capacitance (Ciss) of 210pF (max) at 25V, facilitating fast switching speeds. Housed in an 8-MSOP (Micro8™) surface-mount package, the IRF7509TR is suitable for power management in automotive, industrial, and consumer electronics sectors. It operates reliably across a wide temperature range of -55°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.25W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 2.7A, 2A |
| Input Capacitance (Ciss) (Max) @ Vds | 210pF @ 25V |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 1.4A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | Micro8™ |
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