IRF7507TRPBF
MOSFET N/P-CH 20V 2.4A MICRO8Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF7507TRPBF is a N- and P-channel MOSFET array designed for high-efficiency switching applications. This component offers a 20V Drain-to-Source voltage rating, with continuous drain currents of 2.4A for the N-channel and 1.7A for the P-channel. Featuring a logic level gate, it ensures compatibility with lower voltage drive signals. The array boasts a low on-resistance of 140mOhm at 1.7A and 4.5V Vgs, contributing to reduced conduction losses. With a maximum power dissipation of 1.25W and an operating temperature range of -55°C to 150°C, the IRF7507TRPBF is suitable for demanding environments. The Micro8™ package (8-TSSOP, 8-MSOP) is provided on tape and reel, facilitating automated assembly processes. This MOSFET array finds application in various industries, including automotive and consumer electronics, for power management and signal switching.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.25W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.4A, 1.7A |
| Input Capacitance (Ciss) (Max) @ Vds | 260pF @ 15V |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 1.7A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 8nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 700mV @ 250µA |
| Supplier Device Package | Micro8™ |
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