IRF7507TR
MOSFET N/P-CH 20V MICRO8Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies IRF7507TR is a MOSFET array featuring complementary N-channel and P-channel devices in a single Micro8™ package. This component offers a 20V drain-to-source voltage rating with continuous drain currents of 2.4A for the N-channel and 1.7A for the P-channel at 25°C. The device exhibits a low on-resistance of 140mOhm maximum at 1.7A drain current and 4.5V gate-source voltage, along with a logic level gate for enhanced drive flexibility. Key parameters include a maximum power dissipation of 1.25W and a gate charge (Qg) of 8nC at 4.5V. Input capacitance (Ciss) is specified at 260pF maximum at 15V. The IRF7507TR is suitable for surface mounting and is supplied in an 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) package, delivered on cut tape. This array finds application in power management and switching circuits across various industries.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.25W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.4A, 1.7A |
| Input Capacitance (Ciss) (Max) @ Vds | 260pF @ 15V |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 1.7A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 8nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 700mV @ 250µA |
| Supplier Device Package | Micro8™ |
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