IRF7507PBF
MOSFET N/P-CH 20V 2.4A MICRO8Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® MOSFET Array, part number IRF7507PBF, is a N-channel and P-channel complementary MOSFET device designed for high-efficiency switching applications. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 2.4A for the N-channel and 1.7A for the P-channel at 25°C. The Rds On is specified at a maximum of 140mOhm at 1.7A and 4.5V Vgs. With a logic level gate, it is optimized for low-voltage operation, requiring a Vgs(th) of 700mV at 250µA. The device boasts a low gate charge (Qg) of 8nC at 4.5V and an input capacitance (Ciss) of 260pF at 15V. Packaged in a surface-mount Micro8™ (8-TSSOP, 8-MSOP) form factor, this array offers a maximum power dissipation of 1.25W. It finds application in automotive, industrial, and consumer electronics where compact, high-performance power management is critical.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.25W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.4A, 1.7A |
| Input Capacitance (Ciss) (Max) @ Vds | 260pF @ 15V |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 1.7A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 8nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Supplier Device Package | Micro8™ |