IRF7506TRPBF
MOSFET 2P-CH 30V 1.7A MICRO8Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies HEXFET® MOSFET array, part number IRF7506TRPBF, features two P-channel enhancement mode devices in a compact Micro8™ package. This surface mount component offers a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 1.7A per channel at 25°C. The low gate charge (Qg) of 11nC (max) and input capacitance (Ciss) of 180pF (max) facilitate efficient switching. With a maximum power dissipation of 1.25W and a typical Rds(On) of 270mOhm at 1.2A and 10V, it is suitable for applications requiring compact power management. The logic level gate drive simplifies interfacing with lower voltage control signals. This device is commonly found in consumer electronics and industrial automation. The operating temperature range is -55°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.25W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 1.7A |
| Input Capacitance (Ciss) (Max) @ Vds | 180pF @ 25V |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 1.2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | Micro8™ |