IRF7506TR
MOSFET 2P-CH 30V 1.7A MICRO8Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies IRF7506TR is a dual P-channel MOSFET array designed for efficient power switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 1.7A at 25°C. The device offers a low on-resistance (Rds On) of 270mOhm maximum at 1.2A and 10V gate-source voltage, along with a logic level gate feature for compatibility with lower voltage drive circuits. Key parameters include a gate charge (Qg) of 11nC maximum at 10V and input capacitance (Ciss) of 180pF maximum at 25V. The IRF7506TR is housed in an 8-TSSOP, 8-MSOP (Micro8™) surface mount package, delivering up to 1.25W of power dissipation. This MOSFET array is suitable for use in automotive and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.25W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 1.7A |
| Input Capacitance (Ciss) (Max) @ Vds | 180pF @ 25V |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 1.2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | Micro8™ |
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