IRF7504TRPBF
MOSFET 2P-CH 20V 1.7A MICRO8Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF7504TRPBF is a dual P-channel MOSFET array designed for high-efficiency switching applications. This device features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 1.7A at 25°C. The low on-resistance of 270mOhm maximum at 1.2A, 4.5V gate drive, coupled with a logic level gate, ensures optimal performance in battery-powered and power management systems. With a gate charge (Qg) of 8.2nC maximum at 4.5V and input capacitance (Ciss) of 240pF maximum at 15V, it facilitates fast switching speeds. The MOSFET array is housed in an 8-TSSOP, 8-MSOP (Micro8™) surface-mount package, enabling compact board designs. The maximum power dissipation is 1.25W, and it operates across a wide temperature range of -55°C to 150°C. This component is suitable for use in consumer electronics and industrial automation.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.25W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 1.7A |
| Input Capacitance (Ciss) (Max) @ Vds | 240pF @ 15V |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 1.2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 700mV @ 250µA |
| Supplier Device Package | Micro8™ |
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