IRF7504TR
MOSFET 2P-CH 20V 1.7A MICRO8Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF7504TR is a dual P-channel MOSFET array designed for power management applications. This component features a 20V drain-source voltage (Vdss) and supports a continuous drain current of 1.7A at 25°C. With a low on-resistance of 270mOhm maximum at 1.2A and 4.5V Vgs, it offers efficient switching. The device utilizes Metal Oxide technology and a logic level gate for compatibility with a wider range of gate drive voltages. Key parameters include a maximum power dissipation of 1.25W and an operating temperature range of -55°C to 150°C. Packaged in an 8-TSSOP, 8-MSOP (Micro8™) form factor for surface mounting, this array is suitable for use in various industrial and consumer electronics sectors.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.25W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 1.7A |
| Input Capacitance (Ciss) (Max) @ Vds | 240pF @ 15V |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 1.2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 700mV @ 250µA |
| Supplier Device Package | Micro8™ |