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IRF7503TR

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IRF7503TR

MOSFET 2N-CH 30V 2.4A MICRO8

Manufacturer: Infineon Technologies

Categories: FET, MOSFET Arrays

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Infineon Technologies MOSFET, part number IRF7503TR, is a dual N-channel MOSFET array designed for surface mount applications. Featuring a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 2.4A at 25°C, this component utilizes Logic Level Gate technology. It offers a maximum On-Resistance (Rds On) of 135mOhm at 1.7A and 10V. The device has a maximum power dissipation of 1.25W and a Gate Charge (Qg) of 12nC at 10V. Input capacitance (Ciss) is a maximum of 210pF at 25V. The MOSFET array is supplied in an 8-TSSOP, 8-MSOP (Micro8™) package, presented in cut tape. This component is suitable for use in automotive and industrial applications.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)
Technical Details:
PackagingCut Tape (CT)
Package / Case8-TSSOP, 8-MSOP (0.118"", 3.00mm Width)
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual)
TechnologyMOSFET (Metal Oxide)
Power - Max1.25W
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C2.4A
Input Capacitance (Ciss) (Max) @ Vds210pF @ 25V
Rds On (Max) @ Id, Vgs135mOhm @ 1.7A, 10V
Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device PackageMicro8™

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