IRF7503TR
MOSFET 2N-CH 30V 2.4A MICRO8Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies MOSFET, part number IRF7503TR, is a dual N-channel MOSFET array designed for surface mount applications. Featuring a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 2.4A at 25°C, this component utilizes Logic Level Gate technology. It offers a maximum On-Resistance (Rds On) of 135mOhm at 1.7A and 10V. The device has a maximum power dissipation of 1.25W and a Gate Charge (Qg) of 12nC at 10V. Input capacitance (Ciss) is a maximum of 210pF at 25V. The MOSFET array is supplied in an 8-TSSOP, 8-MSOP (Micro8™) package, presented in cut tape. This component is suitable for use in automotive and industrial applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.25W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 2.4A |
| Input Capacitance (Ciss) (Max) @ Vds | 210pF @ 25V |
| Rds On (Max) @ Id, Vgs | 135mOhm @ 1.7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | Micro8™ |
Request a Quote
Clients Also Buy
IRFI4019HG-117P
MOSFET 2N-CH 150V 8.7A TO220-5
IRF7901D1
MOSFET 2N-CH 30V 6.2A 8SO
IPG20N06S415ATMA1
MOSFET 2N-CH 60V 20A 8TDSON
