IRF7501TRPBF
MOSFET 2N-CH 20V 2.4A MICRO8Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF7501TRPBF is a dual N-channel MOSFET array designed for efficient switching applications. This component features a 20V drain-source breakdown voltage and a continuous drain current capability of 2.4A at 25°C. With a low on-resistance of 135mOhm at 1.7A and 4.5V Vgs, it minimizes conduction losses. The logic level gate enhancement allows for direct interface with low-voltage control signals. The device is housed in a compact Micro8™ (8-TSSOP, 8-MSOP) surface mount package, supplied on tape and reel. Typical applications include power management, battery charging, and portable electronics. Key parameters include a gate charge of 8nC at 4.5V and input capacitance of 260pF at 15V. The maximum power dissipation is 1.25W, with an operating temperature range of -55°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.25W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.4A |
| Input Capacitance (Ciss) (Max) @ Vds | 260pF @ 15V |
| Rds On (Max) @ Id, Vgs | 135mOhm @ 1.7A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 8nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 700mV @ 250µA |
| Supplier Device Package | Micro8™ |
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