IRF7501TR
MOSFET 2N-CH 20V 2.4A MICRO8Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies presents the IRF7501TR, a dual N-channel MOSFET array designed for space-constrained applications. This component features a 20V Drain-Source Voltage (Vdss) and a continuous Drain Current (Id) of 2.4A at 25°C. With a low Rds(On) of 135mOhm at 1.7A and 4.5V Vgs, it offers efficient switching. The logic-level gate ensures compatibility with lower voltage drive signals. Key parameters include a maximum Gate Charge (Qg) of 8nC at 4.5V and an Input Capacitance (Ciss) of 260pF at 15V. The device is housed in an 8-TSSOP/8-MSOP Micro8™ surface mount package, delivering 1.25W of power dissipation. Applications include power management and switching in consumer electronics and industrial control systems. Supplied in Cut Tape (CT).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.25W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.4A |
| Input Capacitance (Ciss) (Max) @ Vds | 260pF @ 15V |
| Rds On (Max) @ Id, Vgs | 135mOhm @ 1.7A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 8nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 700mV @ 250µA |
| Supplier Device Package | Micro8™ |
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