IRF7389
MOSFET N/P-CH 30V 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF7389 is a dual N-channel and P-channel MOSFET array designed for high-efficiency switching applications. This component features a 30V Drain-to-Source Voltage (Vdss) and a low Rds On of 29mOhm at 5.8A and 10V Vgs. The logic level gate ensures compatibility with a wider range of control signals. With a maximum power dissipation of 2.5W and an operating temperature range of -55°C to 150°C, the IRF7389 is suitable for demanding environments. The device is packaged in an 8-SOIC (0.154", 3.90mm Width) for surface mounting and is supplied in tubes. Key parameters include a gate charge (Qg) of 33nC (max) at 10V and input capacitance (Ciss) of 650pF (max) at 25V. This MOSFET array finds application in power management, automotive electronics, and industrial control systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.5W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | 650pF @ 25V |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 5.8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
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