IRF7380QTRPBF
MOSFET 2N-CH 80V 3.6A 8-SOICManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies' IRF7380QTRPBF is a dual N-channel MOSFET array designed for efficient power switching. This component offers a Drain-to-Source Voltage (Vdss) of 80V and a continuous Drain current (Id) of 3.6A at 25°C. Featuring a logic-level gate, it facilitates operation with lower gate drive voltages. The device exhibits a low Rds(On) of 73mOhm maximum at 2.2A and 10V, contributing to reduced conduction losses. With a maximum power dissipation of 2W, the IRF7380QTRPBF is suitable for surface mount applications, housed in an 8-SOIC package. Key parameters include an input capacitance (Ciss) of 660pF at 25V and a gate charge (Qg) of 23nC at 10V, making it relevant for applications in industrial automation and consumer electronics. The device is supplied in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25°C | 3.6A |
| Input Capacitance (Ciss) (Max) @ Vds | 660pF @ 25V |
| Rds On (Max) @ Id, Vgs | 73mOhm @ 2.2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-SO |