IRF7380PBF
MOSFET 2N-CH 80V 3.6A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF7380PBF is a dual N-channel MOSFET array designed for advanced power management applications. This 8-SOIC package device offers a continuous drain current of 3.6A at 25°C with a drain-to-source voltage of 80V. Featuring a logic level gate drive, it is optimized for efficient switching with a maximum Rds(On) of 73mOhm at 2.2A and 10V. Key parameters include a gate charge of 23nC (max) at 10V and input capacitance (Ciss) of 660pF (max) at 25V. With a maximum power dissipation of 2W and an operating temperature range of -55°C to 150°C, this component is suitable for use in automotive, industrial, and consumer electronics sectors requiring high-density power solutions.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25°C | 3.6A |
| Input Capacitance (Ciss) (Max) @ Vds | 660pF @ 25V |
| Rds On (Max) @ Id, Vgs | 73mOhm @ 2.2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-SO |
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