IRF7379TR
MOSFET N/P-CH 30V 5.8A/4.3A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® MOSFET N/P-CH 30V 5.8A/4.3A 8SO, part number IRF7379TR, is a dual-channel MOSFET array designed for high-efficiency switching applications. This device features a 30V drain-source voltage rating and continuous drain currents of 5.8A for the N-channel and 4.3A for the P-channel at 25°C. The low on-resistance of 45mOhm (max) at 5.8A and 10V gate-source voltage minimizes conduction losses. With a maximum power dissipation of 2.5W and a gate charge of 25nC (max) at 10V, it is suitable for power management circuits. The IRF7379TR is provided in an 8-SOIC package for surface mounting and operates across a temperature range of -55°C to 150°C. This component is widely utilized in automotive, industrial, and consumer electronics for battery management, load switching, and power distribution.
Additional Information
Series: HEXFET®RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.5W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5.8A, 4.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 25V |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 5.8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |