IRF7379QTRPBF
MOSFET N/P-CH 30V 8-SOICManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies IRF7379QTRPBF is a dual N-channel and P-channel MOSFET array designed for demanding applications. This component features a 30V drain-source voltage rating and continuous drain currents of 5.8A for the N-channel and 4.3A for the P-channel, both specified at 25°C. The device offers a maximum power dissipation of 2.5W and a low Rds(On) of 45mOhm at 5.8A, 10V for the N-channel. It incorporates logic level gate functionality, simplifying drive requirements. Key electrical characteristics include a maximum gate charge (Qg) of 25nC at 10V and an input capacitance (Ciss) of 520pF at 25V. The IRF7379QTRPBF is supplied in an 8-SOIC package with a surface mount configuration, delivered in cut tape. This MOSFET array is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.5W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5.8A, 4.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 25V |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 5.8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |