IRF7379PBF
MOSFET N/P-CH 30V 5.8A/4.3A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies HEXFET® IRF7379PBF is a dual N-channel and P-channel MOSFET array designed for efficient power management. This component features a 30V drain-source voltage rating, with continuous drain currents of 5.8A for the N-channel and 4.3A for the P-channel device, both specified at 25°C. The array offers a low on-resistance of 45mOhm maximum at 5.8A and 10V gate-source voltage for the N-channel, and a comparable low resistance for the P-channel. Key parameters include a maximum gate charge of 25nC and input capacitance of 520pF at 25V. The IRF7379PBF is housed in an 8-SOIC package with a 2.5W power dissipation capability and supports surface mounting. Its operating temperature range is from -55°C to 150°C. This MOSFET array is commonly utilized in automotive, industrial control, and power supply applications.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.5W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5.8A, 4.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 25V |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 5.8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
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