IRF7351PBF
MOSFET 2N-CH 60V 8A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF7351PBF is a dual N-channel MOSFET array designed for demanding applications. This component features a 60V drain-source voltage rating and supports a continuous drain current of 8A at 25°C. The device utilizes logic-level gate technology, offering enhanced drive characteristics. With a low Rds(on) of 17.8mOhm at 8A and 10V, it minimizes conduction losses. Key parameters include a gate charge (Qg) of 36nC (max) at 10V and input capacitance (Ciss) of 1330pF (max) at 30V. Packaged in an 8-SOIC (0.154", 3.90mm Width) for surface mounting, it offers a maximum power dissipation of 2W. This MOSFET array is suitable for use in power management, automotive, and industrial automation systems. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 8A |
| Input Capacitance (Ciss) (Max) @ Vds | 1330pF @ 30V |
| Rds On (Max) @ Id, Vgs | 17.8mOhm @ 8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 4V @ 50µA |
| Supplier Device Package | 8-SO |
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