IRF7350TRPBF
MOSFET N/P-CH 100V 2.1A/1.5A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF7350TRPBF is a N-channel and P-channel MOSFET array designed for demanding applications. This component features a 100V drain-source voltage rating and continuous drain currents of 2.1A for the N-channel and 1.5A for the P-channel, both specified at 25°C. The device offers a low on-resistance of 210mOhm maximum at 2.1A and 10V, with a gate charge of 28nC maximum at 10V. Input capacitance (Ciss) is rated at 380pF maximum at 25V. Packaged in an 8-SOIC (0.154", 3.90mm width) for surface mounting, this RoHS compliant component dissipates up to 2W and operates across a wide temperature range of -55°C to 150°C. The IRF7350TRPBF is commonly utilized in power management, automotive, and industrial control systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 2.1A, 1.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 380pF @ 25V |
| Rds On (Max) @ Id, Vgs | 210mOhm @ 2.1A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-SO |