IRF7350PBF
MOSFET N/P-CH 100V 2.1A/1.5A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF7350PBF is a MOSFET array featuring complementary N-channel and P-channel configurations. This device offers a drain-source voltage (Vdss) of 100V. The N-channel MOSFET provides a continuous drain current (Id) of up to 2.1A at 25°C, with a maximum on-resistance (Rds On) of 210mOhm at 2.1A and 10V. The P-channel MOSFET supports up to 1.5A continuous drain current with a corresponding Rds On of 210mOhm at 1.5A and -10V.
Key parameters include a maximum gate charge (Qg) of 28nC and input capacitance (Ciss) of 380pF at 25V. The IRF7350PBF is rated for 2W maximum power dissipation and operates across a temperature range of -55°C to 150°C. This component is supplied in a surface-mount 8-SOIC package (0.154" width) and is delivered in tube packaging. It finds application in power management systems across automotive, industrial, and computing sectors.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 2.1A, 1.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 380pF @ 25V |
| Rds On (Max) @ Id, Vgs | 210mOhm @ 2.1A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-SO |
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