IRF7343QTRPBF
MOSFET N/P-CH 55V 8-SOICManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies IRF7343QTRPBF is a MOSFET array featuring both N-channel and P-channel devices. This component offers a Drain to Source Voltage (Vdss) of 55V with continuous drain currents of 4.7A for the N-channel and 3.4A for the P-channel at 25°C. The Rds On (Max) is 50mOhm at 4.7A and 10V. It has a gate charge of 36nC and input capacitance of 740pF. Packaged in an 8-SOIC (0.154", 3.90mm Width) surface mount configuration, this device dissipates a maximum of 2W. The IRF7343QTRPBF is suitable for applications in automotive and industrial sectors requiring efficient switching and power management.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 4.7A, 3.4A |
| Input Capacitance (Ciss) (Max) @ Vds | 740pF @ 25V |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 4.7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |