IRF7343PBF
MOSFET N/P-CH 55V 4.7A/3.4A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET MOSFET array, part number IRF7343PBF, offers a complementary N-channel and P-channel configuration within an 8-SOIC package. This device features a Drain-Source Voltage (Vdss) of 55V, with continuous drain currents of 4.7A for the N-channel and 3.4A for the P-channel at 25°C. The N-channel MOSFET exhibits a maximum On-Resistance (Rds(on)) of 50mOhm at 4.7A and 10V, while the P-channel has a comparable Rds(on) under specified conditions. Gate charge is rated at 36nC maximum at 10V, with input capacitance (Ciss) at 740pF maximum at 25V. Rated for a maximum power dissipation of 2W, this device operates across a temperature range of -55°C to 150°C. The IRF7343PBF is commonly utilized in automotive, industrial, and power management applications requiring efficient switching and complementary MOSFET functionality.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 4.7A, 3.4A |
| Input Capacitance (Ciss) (Max) @ Vds | 740pF @ 25V |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 4.7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
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