IRF7342QTRPBF
MOSFET 2P-CH 55V 3.4A 8SOICManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies IRF7342QTRPBF is a dual P-channel MOSFET array designed for high-efficiency switching applications. This component features a Drain-to-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 3.4A at 25°C. The MOSFET array utilizes a logic-level gate feature for enhanced compatibility with lower voltage control signals. With a maximum power dissipation of 2W and a low on-resistance (Rds On) of 105mOhm at 3.4A and 10V, it ensures minimal power loss. The device is provided in a surface-mount 8-SOIC package, supplied on cut tape. Typical applications include battery management systems, power distribution, and motor control within the automotive and industrial sectors. Key electrical parameters include a gate charge (Qg) of 38nC maximum at 10V and an input capacitance (Ciss) of 690pF maximum at 25V and 25V respectively. The threshold voltage (Vgs(th)) is a maximum of 1V at 250µA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 3.4A |
| Input Capacitance (Ciss) (Max) @ Vds | 690pF @ 25V |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 3.4A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |