IRF7341QTRPBF
MOSFET 2N-CH 55V 5.1A 8-SOICManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies IRF7341QTRPBF is a dual N-channel MOSFET array designed for high-efficiency power switching applications. This component features a 55V drain-to-source voltage and a continuous drain current capability of 5.1A at 25°C. The device exhibits a low on-resistance of 50mOhm maximum at 5.1A and 10V Vgs, coupled with a logic level gate for enhanced drive flexibility. Key parameters include a gate charge (Qg) of 44nC maximum at 10V and input capacitance (Ciss) of 780pF maximum at 25V. The IRF7341QTRPBF is housed in an 8-SOIC package, suitable for surface mounting, and delivers a maximum power dissipation of 2.4W. This MOSFET array is commonly employed in automotive, industrial, and consumer electronics power management solutions.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.4W |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 5.1A |
| Input Capacitance (Ciss) (Max) @ Vds | 780pF @ 25V |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 5.1A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 44nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Supplier Device Package | 8-SO |
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