IRF7341PBF
MOSFET 2N-CH 55V 4.7A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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The Infineon Technologies HEXFET® IRF7341PBF is a dual N-channel MOSFET array offering a 55V drain-source voltage and a continuous drain current of 4.7A at 25°C. This surface-mount component, housed in an 8-SOIC package, features a low on-resistance of 50mOhm maximum at 4.7A and 10V Vgs, along with a logic-level gate for enhanced drive flexibility. Key parameters include a gate charge (Qg) of 36nC maximum at 10V and input capacitance (Ciss) of 740pF maximum at 25V. With a maximum power dissipation of 2W and an operating temperature range of -55°C to 150°C, this device is suitable for applications in automotive, industrial, and consumer electronics.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 4.7A |
| Input Capacitance (Ciss) (Max) @ Vds | 740pF @ 25V |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 4.7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
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