IRF7338TRPBF
MOSFET N/P-CH 12V 6.3A/3A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® MOSFET Array, part number IRF7338TRPBF, offers a dual N-channel and P-channel configuration. This device features a 12V drain-to-source voltage (Vdss) and continuous drain current capabilities of 6.3A for the N-channel and 3A for the P-channel, both specified at 25°C. The MOSFETs are designed with a logic level gate and exhibit a low on-resistance (Rds On) of 34mOhm maximum at 6A and 4.5V Vgs. Key parameters include a maximum gate charge (Qg) of 8.6nC at 4.5V and an input capacitance (Ciss) of 640pF maximum at 9V. This component is packaged in an 8-SOIC (0.154", 3.90mm width) for surface mounting and supports a maximum power dissipation of 2W. The operating temperature range is from -55°C to 150°C (TJ). This array is commonly utilized in applications within the automotive and industrial sectors. The packaging is Tape & Reel (TR).
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 6.3A, 3A |
| Input Capacitance (Ciss) (Max) @ Vds | 640pF @ 9V |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 6A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 8.6nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-SO |