IRF7338PBF
MOSFET N/P-CH 12V 6.3A/3A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF7338PBF is a MOSFET array featuring N- and P-channel configurations. This component operates with a Drain to Source Voltage (Vdss) of 12V and offers continuous drain current capabilities of 6.3A for the N-channel and 3A for the P-channel device. Designed for surface mounting in an 8-SOIC package, it dissipates a maximum power of 2W. Key parameters include a gate charge (Qg) of 8.6nC at 4.5V and input capacitance (Ciss) of 640pF at 9V. The device exhibits a low on-resistance (Rds On) of 34mOhm at 6A and 4.5V, with a threshold voltage (Vgs(th)) of 1.5V at 250µA. Its logic-level gate feature is beneficial for direct control by microcontrollers. This component is commonly utilized in applications such as power management, battery charging circuits, and general-purpose switching within the consumer electronics and industrial automation sectors. It is supplied in tube packaging.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 6.3A, 3A |
| Input Capacitance (Ciss) (Max) @ Vds | 640pF @ 9V |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 6A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 8.6nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-SO |
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