IRF7335D1TR
MOSFET 2N-CH 30V 10A 14SOICManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies FETKY™ MOSFET array, part number IRF7335D1TR, features two N-channel MOSFETs in an asymmetrical configuration. This device offers a 30V Drain-to-Source Voltage (Vdss) and a continuous drain current (Id) of 10A at 25°C. Key specifications include a low Rds On of 17.5mOhm at 10A and 4.5V, a gate charge (Qg) of 20nC maximum at 4.5V, and input capacitance (Ciss) of 1500pF maximum at 15V. The logic-level gate feature facilitates direct drive from microcontrollers. The IRF7335D1TR is designed for surface mounting in a 14-SOIC package, with a maximum power dissipation of 2W and an operating temperature range of -55°C to 150°C. This component is commonly utilized in automotive and industrial applications requiring efficient power switching. The package is supplied on tape and reel.
Additional Information
Series: FETKY™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 14-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 10A |
| Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 15V |
| Rds On (Max) @ Id, Vgs | 17.5mOhm @ 10A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 14-SOIC |
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