IRF7331TRPBF-1
MOSFET 2N-CH 20V 7A 8SOICManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies HEXFET® MOSFET Array, Part Number IRF7331TRPBF-1, features a dual 2 N-Channel configuration. This device offers a Drain to Source Voltage (Vdss) of 20V and a continuous Drain current (Id) of 7A at 25°C. The ON-resistance (Rds On) is a maximum of 30mOhm at 7A and 4.5V. Gate Charge (Qg) is 20nC maximum at 4.5V, with Input Capacitance (Ciss) at 1340pF maximum at 16V. The MOSFET array is constructed using Metal Oxide technology and is housed in an 8-SOIC package, supplied on tape and reel (TR). It supports a maximum power dissipation of 2W (Ta) and operates across a temperature range of -55°C to 150°C. This component is suitable for various applications including automotive and industrial control systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W (Ta) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 1340pF @ 16V |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 7A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | 8-SOIC |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
