IRF7331TRPBF
MOSFET 2N-CH 20V 7A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF7331TRPBF is a dual N-channel MOSFET array designed for efficient power switching applications. This surface-mount component offers a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 7A at 25°C. Featuring a logic-level gate, it is optimized for compatibility with lower voltage drive signals. The device exhibits a low on-resistance (Rds On) of 30mOhm maximum at 7A and 4.5V, contributing to reduced power dissipation. With a maximum power dissipation of 2W and a gate charge (Qg) of 20nC at 4.5V, it is suitable for applications in industrial automation, consumer electronics, and automotive systems. The 8-SOIC package is supplied on tape and reel.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 7A |
| Input Capacitance (Ciss) (Max) @ Vds | 1340pF @ 16V |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 7A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | 8-SO |
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