IRF7331PBF
MOSFET 2N-CH 20V 7A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF7331PBF is a dual N-channel MOSFET array designed for efficient power switching applications. This component features a 20V drain-source voltage (Vdss) rating and a continuous drain current (Id) of 7A at 25°C. The optimized gate charge (Qg) of 20nC at 4.5V and a low Rds(on) of 30mOhm at 7A, 4.5V ensure low conduction losses. With a logic-level gate feature, it is suitable for direct control by microcontrollers. The 8-SOIC package facilitates surface mounting and offers a maximum power dissipation of 2W. This MOSFET array finds utility in automotive, industrial, and consumer electronics, particularly in power management circuits and switching regulators. The operating temperature range is -55°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 7A |
| Input Capacitance (Ciss) (Max) @ Vds | 1340pF @ 16V |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 7A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | 8-SO |
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