IRF7331
MOSFET 2N-CH 20V 7A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF7331 is a dual N-channel MOSFET array designed for high-efficiency switching applications. This device features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 7A at 25°C. With a low Rds(On) of 30mOhm at 7A and 4.5V, it minimizes conduction losses. The logic level gate capability simplifies drive requirements. Key parameters include Gate Charge (Qg) of 20nC (max) at 4.5V and Input Capacitance (Ciss) of 1340pF (max) at 16V. The IRF7331 is presented in a surface mount 8-SOIC package (0.154", 3.90mm Width) with a maximum power dissipation of 2W. Operating temperature range is from -55°C to 150°C (TJ). This component is widely utilized in automotive, industrial, and consumer electronics for power management and switching circuits.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 7A |
| Input Capacitance (Ciss) (Max) @ Vds | 1340pF @ 16V |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 7A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | 8-SO |
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