IRF7329TR
MOSFET 2P-CH 12V 9.2A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies HEXFET® IRF7329TR is a dual P-channel power MOSFET designed for efficient switching applications. This 8-SOIC packaged device features a Drain-Source Voltage (Vdss) of 12V and a continuous Drain Current (Id) of 9.2A at 25°C. The MOSFET array offers a low on-resistance of 17mOhm at 9.2A and 4.5V, coupled with a maximum power dissipation of 2W. Key parameters include a Gate Charge (Qg) of 57nC at 4.5V and an Input Capacitance (Ciss) of 3450pF at 10V. The logic-level gate enhances compatibility with lower voltage drive signals. Operating across a temperature range of -55°C to 150°C, this component is suitable for use in automotive, industrial, and consumer electronics power management circuits. The IRF7329TR is supplied in Tape & Reel packaging.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 9.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 3450pF @ 10V |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 9.2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 57nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | 8-SO |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
