IRF7329PBF
MOSFET 2P-CH 12V 9.2A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® MOSFET array, part number IRF7329PBF, features two P-channel MOSFETs in a single 8-SOIC package. This device offers a continuous drain current of 9.2A and a Drain-to-Source Voltage (Vdss) of 12V. With a low Rds(On) of 17mOhm at 9.2A and 4.5V, and a logic-level gate feature, it is suitable for applications requiring efficient power switching. Key parameters include a maximum power dissipation of 2W and a gate charge of 57nC. The operating temperature range is -55°C to 150°C. This component finds utility in power management and automotive applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 9.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 3450pF @ 10V |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 9.2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 57nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | 8-SO |