IRF7325TR
MOSFET 2P-CH 12V 7.8A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies HEXFET® IRF7325TR is a dual P-channel MOSFET array featuring a 12V drain-source voltage and a continuous drain current of 7.8A at 25°C. This surface-mount device, packaged in an 8-SOIC (0.154", 3.90mm Width), offers a low on-resistance of 24mOhm maximum at 7.8A and 4.5V gate-source voltage. The MOSFET array supports logic-level gate drive with a typical gate charge of 33nC at 4.5V and an input capacitance of 2020pF maximum at 10V. With a maximum power dissipation of 2W and an operating temperature range of -55°C to 150°C, the IRF7325TR is suitable for applications in consumer electronics, industrial automation, and power management systems. The component is supplied in tape and reel packaging.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 7.8A |
| Input Capacitance (Ciss) (Max) @ Vds | 2020pF @ 10V |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 7.8A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 33nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | 8-SO |