IRF7325PBF
MOSFET 2P-CH 12V 7.8A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies HEXFET® IRF7325PBF is a dual P-channel MOSFET array designed for power management applications. This device features a Drain-Source Voltage (Vdss) of 12V and a continuous Drain Current (Id) of 7.8A at 25°C, with a low Rds(On) of 24mOhm at 7.8A and 4.5V Vgs. The logic-level gate capability simplifies drive requirements. With a maximum power dissipation of 2W and a low gate charge (Qg) of 33nC at 4.5V, it is suitable for battery-powered equipment, consumer electronics, and automotive systems. The component is packaged in a surface-mount 8-SOIC (0.154", 3.90mm Width) format and operates across a temperature range of -55°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 7.8A |
| Input Capacitance (Ciss) (Max) @ Vds | 2020pF @ 10V |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 7.8A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 33nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | 8-SO |
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