IRF7325
MOSFET 2P-CH 12V 7.8A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF7325 is a dual P-channel MOSFET array designed for high-efficiency switching applications. This 12V device features a continuous drain current capability of 7.8A at 25°C and a low on-resistance of 24mOhm at 7.8A, 4.5V Vgs. The logic-level gate design simplifies driving circuitry, with a gate charge of 33nC maximum at 4.5V and an input capacitance of 2020pF maximum at 10V.
The IRF7325 is packaged in an 8-SOIC (0.154", 3.90mm Width) surface mount configuration, supporting a maximum power dissipation of 2W. Its operating temperature range is -55°C to 150°C (TJ). This component is commonly utilized in consumer electronics, automotive systems, and industrial power management.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 7.8A |
| Input Capacitance (Ciss) (Max) @ Vds | 2020pF @ 10V |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 7.8A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 33nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | 8-SO |
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