IRF7324PBF
MOSFET 2P-CH 20V 9A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF7324PBF is a dual P-channel MOSFET array designed for demanding applications. This surface-mount component features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 9A at 25°C. The device boasts a low on-resistance (Rds On) of 18mOhm at 9A and 4.5V, optimized for efficient power switching. With a logic-level gate, it facilitates direct control from low-voltage microcontrollers. Key parameters include a gate charge (Qg) of 63nC at 5V and input capacitance (Ciss) of 2940pF at 15V. The 8-SOIC package offers a maximum power dissipation of 2W. Operating across a wide temperature range of -55°C to 150°C, this MOSFET array is suitable for use in automotive, industrial automation, and power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 9A |
| Input Capacitance (Ciss) (Max) @ Vds | 2940pF @ 15V |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 9A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 63nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |