IRF7319PBF
MOSFET N/P-CH 30V 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® MOSFET N/P-CH 30V 8SO, part number IRF7319PBF, is a dual MOSFET array featuring complementary N-channel and P-channel devices in a surface-mount 8-SOIC package. This component offers a Drain-to-Source Voltage (Vdss) of 30V and a maximum continuous drain current capability of 5.8A with a low Rds(on) of 29mOhm at 10V Vgs. The IRF7319PBF exhibits a typical input capacitance (Ciss) of 650pF and a gate charge (Qg) of 33nC. With a maximum power dissipation of 2W and an operating temperature range of -55°C to 150°C, this device is suitable for applications in automotive, industrial, and general-purpose power management.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | 650pF @ 25V |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 5.8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
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